Home -

And then there was nano, The smallest Bible in the word Presented in the Israel... Read More

About Us

Welcome to the Microelectronics and Nanoelectronics research centres at the Technion Israel Institute of Technology.

The centres, located in the Wolfson microelectronics and Sarah and Moshe Zisapel nanoelectronics buildings, include the micro-nano fabrication unit (MNFU) which is a national infrastructure for micro and nano device engineering encompassing more than 700 sq meter of Class100 and Class1000 cleanroom.

The MNFU is a shared research and development facility providing more than 50 Principal Investigators and over 200 academic and industrial researchers a complete set of micro- and nano-fabrication tools. The centres’ engineers and technicians also provide process and prototype development support.

Please contact us if you are an academic or industrial researcher interested in the capabilities we have to offer.

Our Vision

Turning ideas into a working device

Enable the fabrication of high quality devices requiring patterning from ~100 micron down to ~10 nanometer.* Such devices could be based on flow of electrons, photons or fluids and can produce signals that are electrical, chemical, mechanical, etc.

Become center of knowledge and education.

Provide these capabilities nationwide (national infrastructure for micro and nano device engineering).

Promote collaborations with overseas centres

* 100 micron or 100 micrometre is a meter divided by 10,000 that corresponds to the diameter of human hair and 60 micron is about the size of a grain of salt. 10nm is a meter divided by 100 Million and is the scale of a molecules or of state of the art silicon transistors that make up the CPU (“brain”) of your cell phone.

Sara and Moshe Zisapel nanoelectronic center & Wolfson microelectronic center

Technion president prof Peretz-Lavie visiting the MNFPU facility

Our staff

E-beam lithography tool for nanopatterning

Pad printing technology

Undergraduate courses

Annual MNFPU users meeting

Nano bible

Encapsulated Franklin Oscillator Capable of 200,000,000 Switching Cycles

A Combustion Type Gas Sensor Based on Micro Machined CMOS Transistor with Pt Nano-Particles Printed Catalytic Layer

A new method to fabricate ultra thin transmission lines

Demonstration and Physical Analysis of Oxide Field Effect Transistors

Reconfigurable Radiofrequency Circuits based on Phase-Change Materials

MNFPU Equipment

Access doping of 2D MoS2 monolayers: Early fabrication process steps

Integrating nanofluidics with nanopores

Research & Development Highlights 2019

Effects of titanium layer oxygen scavenging on the high-k InGaAs Interface

Three port Josephson junction embedded in a superconducting DC-SQUID

Light Direction-dependent plasmonic enhanced GaNAIN quantum cascade detector

Transport Phenomena2

Transport Phenomena

Sensitive Magnetic Resonance Signal detection

Resopnsivity Enhancement of MIS Photodetectors by Plasmonic Nano Antennas

Quasicrystal Metasurface

Presence sensor

Photonic spin controlled multifunctional shared aperture antenna array

Indium Phosphide Nano Flags

Flip-over process to improve resonant light trapping in thin film hematite photoanodes for solar hydrogen production

Fabricating Vertical Organic FET’s Patterned and coating the source electrode

Bio-inspired Growth of single crystal Nanoporous Gold

1D and 2D Numerical simulation of electrical currents in excitonic solar cell

Non-uniformity of Gold Free Ohmic Contacts Induced by Non-uniformity of the AlN Spacer Layer in AlGaN/GaN HFETs