Tube Furnaces (BTI-Bruce RTRI-878)

Vendor: Bruce Technologies Inc., Model: BDF-4 RTRI-878 & BDF-4 RTRI-880

Contact: Aya Cohen (04-829-2767, ayac@technion.ac.il)

Bruce Technologies Inc. BDF-4 RTRI-878, 4-stack furnace system, with 4 horizontal tubes (3- LPCVD, 1- atmospheric), prepared for processing of up to 4” size silicon wafers.

Bruce Technologies Inc. BDF-4 RTRI-880, 4-stack furnace system, with 4 horizontal atmospheric tubes, prepared for processing of up to 4” size silicon wafers.
Quartz reactor tubes, Quartz Boats, three temperature zones manual loading set up.

Samples are restricted to silicon-based materials only

Atmospheric furnaces:

  1. Dry oxidation – N2 ambient, 700-1100C, O2, DCE
  2. Wet oxidation – N2 ambient, 700-1050C, O2, H2
  3. POCL – N2 ambient, 700-950C, O2, POCl3
  4. Hydrogen anneal – N2 ambient, 400-600C, H2, N2
  5. Anneal – N2, O2 ambient, 600-1100C, O2, N2

Oxidation process parameters:

Temperature 600-1100°C
Thickness 80-10,000Å
Wafer load 100
Refractive index 1.45 ± 0.05
Thin oxide 75Å
WW, WTW, RTR ± 2 %

Low-Pressure CVD furnaces:

  1. LTO- N2 ambient, <400C, SiH4, O2, 200-350mTorr
  2. Poly Silicon – N2 ambient, 500-650C, SiH4, 100-300mTorr
  3. Silicon Nitride – N2 ambient, 700-810C, NH3, SiH2Cl2, 100-300mTorr

Nitride process parameters:

Wafer load 100
Deposition rate 70-90 Å/min
Thickness 3,500-5,000 Å
Refractive index 2.0 ± 0.05
WW, WTW, RTR ± 3.5 %