Reactive Ion Etching (RIE)

Vendor: Plasma-Therm, Model: 790

Contact: Dr. Orna Ternyak (04-829-4204,

Plasma-Therm 790 is an 8-inch diameter parallel plate, PC-controlled, turbo-pumped RIE system for dry etching involving Fluorine based gas chemistries such as CF4, CHF3, and SF6. The substrate is placed on a biased electrode facing a grounded electrode. The main processes are anisotropic etching of Si, SiO2, Si3N4, but a wide range of other materials can be also processed, like TiN, Ti, W, Mo, Nb, Au, Pt, TiO2, HfO2, Photoresist (Descum), PolyImide, PDMS, BCB, Diamond, SiC, etc. The tool is the “work horse” due to its robustness, versatility and easy operation.


  • Direct loading (without load lock)
  • Chuck size is 8”, small pieces can be processed
  • Fully automatic and manual operation
  • Available gases: SF6, CHF3, CF4, O2, N2
  • Temperature of the chuck is controlled in the 5 ÷ 100°C temperature range
  • Power source is 500W RF 13.56MHz