Rapid Thermal Annealing (Jipelec JetFirst 200HT)

Vendor: JIPelec, Model: JetFirst 200HT

Contact: Valentina Korchnoy (04-829-3250, vkorchno@technion.ac.il)

JetFirst200HT is a Rapid Thermal Processing (RTP) tool for R&D applications. The system has a stainless steel chamber suitable for rapid heating of thin films under controlled atmosphere or vacuum. The system includes a cold wall reaction chamber with maximum 8” wafer capability and powerful multi-zone halogen lamp furnace. The system equipped with two temperature control sensors: optical pyrometer and thermocouple. It uses digital PID temperature controller for fast, accurate, and repeatable thermal control across the temperature range.

Applications:

RTP is used in technologies where thermodynamic equilibrium is not required: shallow junction formation, dopant activation and structure recovery after ion implantation, thin films growth and annealing, metallic contacts alloying and more.

Specifications:

  • Substrate diameter max 8”
  • Process gases: N2, O2, NH3, Forming Gas
  • N2 purge gas line
  • Cold-wall metal chamber design
  • 18 halogen lamps in 3 heating zones
  • Max power 34 kW
  • Operating temperature up to 1400 °C
  • Ramp rate 200°C/sec max
  • Temperature reproducibility ~50 °C
  • Vacuum up to10-5 Torr
  • Thermocouple control: ambient to 1000 °C
  • Pyrometer control: 400 °C to 1200 °C

Limitations:

Temperature Max hold time
T<500 °C 1 hour
T<700 °C 30 min
T<900 °C 10 min
T<1200 °C 2 min

Applications:

  • Rapid Thermal Annealing (RTA) of Si and compound semiconductor wafers
  • Metallic contact alloying
  • Rapid Thermal Oxidation (RTO), de-oxidation, and nitridation (RTN)
  • Rapid Thermal Diffusion (RTD)
  • Crystallization
  • Structural and mechanical stress relaxation

Allowed materials:

Silicon, III-V and II-IV compound semiconductors, glass wafers, cutted wafer pieces.