Vendor: JIPelec, Model: JetFirst 200HT
Contact: Valentina Korchnoy (04-829-3250, vkorchno@technion.ac.il)
JetFirst200HT is a Rapid Thermal Processing (RTP) tool for R&D applications. The system has a stainless steel chamber suitable for rapid heating of thin films under controlled atmosphere or vacuum. The system includes a cold wall reaction chamber with maximum 8” wafer capability and powerful multi-zone halogen lamp furnace. The system equipped with two temperature control sensors: optical pyrometer and thermocouple. It uses digital PID temperature controller for fast, accurate, and repeatable thermal control across the temperature range.
Applications:
RTP is used in technologies where thermodynamic equilibrium is not required: shallow junction formation, dopant activation and structure recovery after ion implantation, thin films growth and annealing, metallic contacts alloying and more.
Specifications:
- Substrate diameter max 8”
- Process gases: N2, O2, NH3, Forming Gas
- N2 purge gas line
- Cold-wall metal chamber design
- 18 halogen lamps in 3 heating zones
- Max power 34 kW
- Operating temperature up to 1400 °C
- Ramp rate 200°C/sec max
- Temperature reproducibility ~50 °C
- Vacuum up to10-5 Torr
- Thermocouple control: ambient to 1000 °C
- Pyrometer control: 400 °C to 1200 °C
Limitations:
| Temperature | Max hold time |
| T<500 °C | 1 hour |
| T<700 °C | 30 min |
| T<900 °C | 10 min |
| T<1200 °C | 2 min |
Applications:
- Rapid Thermal Annealing (RTA) of Si and compound semiconductor wafers
- Metallic contact alloying
- Rapid Thermal Oxidation (RTO), de-oxidation, and nitridation (RTN)
- Rapid Thermal Diffusion (RTD)
- Crystallization
- Structural and mechanical stress relaxation
Allowed materials:
Silicon, III-V and II-IV compound semiconductors, glass wafers, cutted wafer pieces.