Plasma-Assisted Atomic Layer Deposition (Ultratech/Cambridge Nanotech Fiji G2)

Vendor: Ultratech/CNT, Model: Fiji G2

Contact: Valentina Korchnoy (04-829-3250,

The Ultratech/CNT Fiji G2 is Plasma Enhanced Atomic Layer Deposition (PE ALD) system that enables deposition of a wide range of materials including oxides, nitrides, and metals. It uses a self-limiting process to deposit one atomic layer at a time by the sequential pulsing of special precursor vapors. It provides pinhole-free coatings perfectly uniform in thickness, conformably covering even high aspect ratio trenches and cavities for advanced nanotechnology applications.

Capabilities: Al2O3, AlN, HfO2, TiO2, TiN, TaO2, NiO, GaN, ZnO, Si3N4 SiO2, ZrO2, MoO3, WO3, VO2, Pt

Click for a full list of the capabilities.


  • Conventional thermal ALD
  • Plasma Enhanced ALD with an integrated Inductively Coupled Plasma (ICP) source
  • Exposure Mode for high aspect ratio substrates
  • Up to 300W RF power source
  • Temperature controlled substrate holder 200mm heated up to 500˚C
  • Reactor walls heated up to 300˚C
  • 6 heated precursor sources
  • 6 individually controlled plasma gas source MFCs
  • Load lock