Tube Furnaces (BTI-Bruce RTRI-878)

Vendor: Bruce Technologies Inc., Model: BDF-4 RTRI-878 & BDF-4 RTRI-880

Contact: Eran Lipp (04-829-4205, lipp@technion.ac.il)

Bruce Technologies Inc. BDF-4 RTRI-878, 4-stack furnace system, with 4 horizontal tubes (3- LPCVD, 1- atmospheric), prepared for processing of up to 4” size silicon wafers.

Bruce Technologies Inc. BDF-4 RTRI-880, 4-stack furnace system, with 4 horizontal atmospheric tubes, prepared for processing of up to 4” size silicon wafers.
Quartz reactor tubes, Quartz Boats, three temperature zones manual loading set up.

Samples are restricted to silicon-based materials only

Atmospheric furnaces:

1. Dry oxidation – N₂ ambient, 700-1100C, O₂
2. Hydrogen anneal – N₂ ambient, 400-600C, H₂, N₂
3. Anneal – N₂, O₂ ambient, 600-1100C, O₂, N₂

Oxidation process parameters:

Temperature	600-1100°C
Thickness	80-10,000Å
Wafer load	100
Refractive index	1.45 ± 0.05
Thin oxide	75Å
WW, WTW, RTR	± 2 %

Low-Pressure CVD furnace:

1. Silicon Nitride – N₂ ambient, 700-810C, NH₃, SiH₂Cl₂, 100-300mTorr

Nitride process parameters:

Wafer load	100
Deposition rate	70-90 Å/min
Thickness	3,500-5,000 Å
Refractive index	2.0 ± 0.05
WW, WTW, RTR	± 3.5 %