Tube Furnaces (BTI-Bruce RTRI-878)

Vendor: Bruce Technologies Inc., Model: BDF-4 RTRI-878 & BDF-4 RTRI-880

Contact: Anat Sadeh (04-829-2767, anatsa@ef.technion.ac.il)

Bruce Technologies Inc. BDF-4 RTRI-878, 4-stack furnace system, with 4 horizontal tubes (3- LPCVD, 1- atmospheric), prepared for processing of up to 4” size silicon wafers.

Bruce Technologies Inc. BDF-4 RTRI-880, 4-stack furnace system, with 4 horizontal atmospheric tubes, prepared for processing of up to 4” size silicon wafers.
Quartz reactor tubes, Quartz Boats, three temperature zones manual loading set up.

Samples are restricted to silicon based materials only

Atmospheric furnaces:

  1. Dry oxidation – N2 ambient, 700-1100C, O2, DCE
  2. Wet oxidation – N2 ambient, 700-1050C, O2, H2
  3. POCL – N2 ambient, 700-950C, O2, POCl3
  4. Hydrogen anneal – N2 ambient, 400-600C, H2, N2
  5. Anneal – N2,O2 ambient, 600-1100C, O2, N2

Oxidation process parameters:

Temperature 600-1100°C
Thickness 80-10,000Å
Wafer load 100
Refractive index 1.45 ± 0.05
Thin oxide 75Å
WW, WTW, RTR ± 2 %

 

Low Pressure CVD furnaces:

  1. LTO- N2 ambient, <400C, SiH4, O2, 200-350mTorr
  2. Poly Silicon – N2 ambient, 500-650C, SiH4, 100-300mTorr
  3. Silicon Nitride – N2 ambient, 700-810C, NH3, SiH2Cl2, 100-300mTorr

Nitride process parameters:

Wafer load 100
Deposition rate 70-90 Å/min
Thickness 3,500-5,000 Å
Refractive index 2.0 ± 0.05
WW, WTW, RTR ± 3.5 %