Plasma-Assisted Atomic Layer Deposition (Ultratech/Cambridge Nanotech Fiji G2)

Vendor: Ultratech/CNT, Model: Fiji G2

Contact: Valentina Korchnoy (04-829-3894, vkorchno@ef.technion.ac.il)

The Ultratech/CNT Fiji G2 is Plasma Enhanced Atomic Layer Deposition (PE ALD) system that enables deposition of a wide range of materials including oxides, nitrides, and metals. It uses self-limiting process to deposit one atomic layer at a time by sequential pulsing of special precursor vapours. It provides pinhole free coatings perfectly uniform in thickness, conformably covering even high aspect ratio trenches and cavities for advanced nanotechnology applications.

Capabilities: Al2O3, AlN, HfO2, TiO2, TiN, TaO2, NiO, GaN, ZnO, Si3N4 SiO2, ZrO2, MoO3, WO3, VO2, Pt

Specifications:

  • Conventional thermal ALD
  • Plasma Enhanced ALD with an integrated Inductively Coupled Plasma (ICP) source
  • Exposure Mode for high aspect ratio substrates
  • Up to 300W RF power source
  • Temperature controlled substrate holder 200mm heated up to 500˚C
  • Reactor walls heated up to 300˚C
  • 6 heated precursor sources
  • 6 individually controlled plasma gas source MFCs
  • Load lock